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AG603-89G fiches techniques PDF

TriQuint Semiconductor - InGaP HBT Gain Block

Numéro de référence AG603-89G
Description InGaP HBT Gain Block
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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AG603-89G fiche technique
Applications
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
WCDMA / LTE
AG603-89G
InGaP HBT Gain Block
AG603G
SOT-89 Package
Product Features
DC – 3000 MHz
+19.5 dBm P1dB at 900 MHz
+33 dBm OIP3 at 900 MHz
18.5 dB Gain at 900 MHz
Single Voltage Supply
SOT-89 package
Internally matched to 50
Functional Block Diagram
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / VCC
General Description
The AG603-89 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG603-89 typically provides
18.5 dB of gain, +33 dBm OIP3, and +19.5 dBm P1dB.
The device combines dependable performance with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85 °C and is
housed in a lead-free/green/RoHS-compliant SOT-89
industry-standard SMT package.
The AG603-89 consists of Darlington pair amplifiers
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless
technologies such as GSM, CDMA, W-CDMA and LTE.
In addition, the AG603-89 will work for other applications
within the DC to 3 GHz frequency range such as CATV.
Pin Configuration
Pin No.
1
2
3
Backside Paddle
Label
RF IN
GND
RF OUT / VCC
GND
Ordering Information
Part No.
Description
AG603-89G
InGaP/GaAs HBT Gain Block
AG603-89PCB
0.7-2.4 GHz Evaluation Board
Standard T/R size = 3000 pieces on a 13” reel
Datasheet: Rev A 9/5/13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com

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