|
|
PDF T1G6001032-SM Data sheet ( Hoja de datos )
| Número de pieza | T1G6001032-SM | |
| Descripción | GaN RF Power Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de T1G6001032-SM (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 10 W Peak at 3.1 GHz
• Linear Gain: >17 dB at 3.1 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
18, 19, 20, 21, 22, 23
2, 3, 4, 5, 6, 7
33
1, 8, 9, 10, 11, 12, 13,
14, 15, 16, 17, 24, 25,
26, 27, 28, 29, 30, 31,
32
Label
VD / RF OUT
VG / RF IN
Source
Not Connected
Ordering Information
Part
ECCN
T1G6001032-SM EAR99
T1G6001032-SM-
EVB1
EAR99
Description
Packaged part
Surface Mount
2.7-3.1 GHz
Evaluation Board
Datasheet: Rev A 05-24-13
© 2013 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 50 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. Load pull at 1 GHz and 2 GHz are available on request
Datasheet: Rev A 05-24-13
© 2013 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Mechanical Information
All dimensions are in millimeters.
T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power Transistor
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev A 05-24-13
© 2013 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet T1G6001032-SM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| T1G6001032-SM | GaN RF Power Transistor | TriQuint Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |