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PDF 2SC2668 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2668 | |
| Descripción | NPN Transistor | |
| Fabricantes | GD electronics | |
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2SC2668
TO-92S Transistor (NPN)
1. EMITTER
2. COLLECTOR
1 2 3 3. BASE
Features
Small reverse transfer capacitance
Low Noise Figure
TO-92S
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
4
20
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse Transfer Capacitance
Collector-Base Time Constant
Transition frequency
Power Gain
Noise figure
Symbol
Test conditions
V(BR)CBO IC =100μA, IE=0
V(BR)CEO
V(BR)EBO
IC =1mA, IB=0
IE=100μA, IC=0
ICBO VCB=40V, IE=0
IEBO VEB=4V, IC=0
hFE VCE=6V, IC=1mA
Cre VCE=6V, f=1MHz
Cc·rbb’ VCE=6V, IE=-1mA, f=30MHz
fT VCE=6V, IC=1mA
Gpe VCC=6V, IC =1mA, f=100MHz
NF VCC=6V, IC =1mA, f=100MHz
MIN TYP MAX UNIT
40 V
30 V
4V
0.5 μA
0.5 μA
40 200
0.7 pF
30 ps
550 MHz
18 dB
5 dB
CLASSIFICATION OF hFE
Rank
Range
R
40-80
O
70-140
Y
100-200
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC2668.PDF ] | |
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