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Datasheet BD45E325-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BD4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BD40-931 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | BD41-931 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | BD410 | NPN Epitaxial Silicon Power Transistor Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
NPN EPITAXIAL SILICON POWER TRANSISTOR
BD410 TO-126 Plastic Package
EC
B
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage  Continental transistor | | |
| 4 | BD410 | NPN EPITAXIAL SILICON POWER TRANSISTOR SEMICONDUCTORS
BD410 NPN EPITAXILA SILICON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF-amplifier for high supply voltage They are intended for control circuit, vertical output stages in TVsets, and general purpose applications. C  Comset Semiconductors transistor | | |
| 5 | BD41030FJ-C | LIN Transceiver Datasheet
LIN Transceiver for Automotive
BD41030FJ-C BD41030HFN-C
General Description
BD41030FJ-C,BD41030HFN-C is the best transceiver
for BUS system which need LIN (Local Interconnect
Network) master and slave protocol.
BD41030FJ-C,BD41030HFN-C is low standby electricity
consumption in sleep mod  ROHM Semiconductor transceiver | | |
| 6 | BD41030HFN-C | LIN Transceiver Datasheet
LIN Transceiver for Automotive
BD41030FJ-C BD41030HFN-C
General Description
BD41030FJ-C,BD41030HFN-C is the best transceiver
for BUS system which need LIN (Local Interconnect
Network) master and slave protocol.
BD41030FJ-C,BD41030HFN-C is low standby electricity
consumption in sleep mod ROHM Semiconductor transceiver | | |
| 7 | BD411 | Medium Power Linear and Switching Applications BD439/441
BD439/441
Medium Power Linear and Switching Applications
• Complement to BD440, BD442 respectively
1
TO-126 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD439 : BD441 VCES C  Fairchild Semiconductor data | |
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