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Numéro de référence | C5356 | ||
Description | NPN Transistor - 2SC5356 | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5356
2SC5356
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Unit: mm
• Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A)
• High collectors breakdown voltage: VCEO = 800 V
• High DC current gain: hFE = 15 (min) (IC = 0.15 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
900
800
7
3
5
1
1.5
25
150
−55 to 150
V
V
V
A
A
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
2-7B5A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7B7A
Weight: 0.36 g (typ.)
1 2006-11-10
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Pages | Pages 5 | ||
Télécharger | [ C5356 ] |
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