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Numéro de référence | C5459 | ||
Description | NPN Transistor - 2SC5459 | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5459
Switching Regulator Applications
High-Voltage Switching Applications
DC-DC Converter Applications
2SC5459
Unit: mm
• High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A)
• High collector breakdown voltage: VCEO = 400 V
• High DC current gain: hFE = 20 (min) (IC = 0.3 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
600
400
7
3
5
1
2.0
25
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2007-04-26
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Pages | Pages 4 | ||
Télécharger | [ C5459 ] |
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