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PDF C5089 Data sheet ( Hoja de datos )
| Número de pieza | C5089 | |
| Descripción | NPN Transistor - 2SC5089 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C5089 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 10 V
Emitter-base voltage
VEBO 1.5 V
Base current
IB 20 mA
Collector current
IC 40 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
S-MINI
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12mg (typ.)
1 2010-02-17
1 page  
2SC5089
5 2010-02-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet C5089.PDF ] | |
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