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Numéro de référence | C5201 | ||
Description | NPN Transistor - 2SC5201 | ||
Fabricant | Toshiba | ||
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1 Page
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO = 600 V
• Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
600
600
7
50
100
25
900
150
−55 to 150
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-92MOD
―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-12-21
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Pages | Pages 5 | ||
Télécharger | [ C5201 ] |
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