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Toshiba - NPN Transistor - 2SC5093

Numéro de référence C5093
Description NPN Transistor - 2SC5093
Fabricant Toshiba 
Logo Toshiba 





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C5093 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5093
2SC5093
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
10
1.5
20
40
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-2K1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz
12 15 ¾
dB
6.5 9.5 ¾
¾ 1.4 2.5
dB
¾ 1.8
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 20 mA
Cob VCB = 15 V, IE = 0, f = 1 MHz (Note 2)
Cre
¾
¾
50
¾
¾
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾
¾
Max
1
1
¾ 160
0.65
0.45
1.05
0.95
Unit
mA
mA
pF
pF
1 2003-03-24

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