|
|
Numéro de référence | C5458 | ||
Description | NPN Transistor - 2SC5458 | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5458
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
DC-AC Inverter Applications
2SC5458
Unit: mm
• Excellent switching times: tr = 0.5 µs (max)
tf = 0.3 µs (max) (IC = 0.4 A)
• High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
600
400
7
0.8
1.5
0.5
1.0
10
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2005-02-01
|
|||
Pages | Pages 5 | ||
Télécharger | [ C5458 ] |
No | Description détaillée | Fabricant |
C5450 | Silicon NPN Power Transistor | Inchange Semiconductor |
C5451 | NPN Transistor - 2SC5451 | Sanyo Semicon Device |
C5458 | NPN Transistor - 2SC5458 | Toshiba |
C5459 | NPN Transistor - 2SC5459 | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |