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Toshiba - NPN Transistor - 2SC5458

Numéro de référence C5458
Description NPN Transistor - 2SC5458
Fabricant Toshiba 
Logo Toshiba 





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C5458 fiche technique
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5458
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
DC-AC Inverter Applications
2SC5458
Unit: mm
Excellent switching times: tr = 0.5 µs (max)
tf = 0.3 µs (max) (IC = 0.4 A)
High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
600
400
7
0.8
1.5
0.5
1.0
10
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2005-02-01

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