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Numéro de référence | C3607 | ||
Description | NPN Transistor - 2SC3607 | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3607
2SC3607
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
VCBO
VCEO
VEBO
IB
IC
PC
20
12
3
40
80
400
800
(Note 1)
Junction temperature
Storage temperature range
Tj 150
Tstg -55~125
Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 t
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
VCE = 10 V, IC = 40 mA, f = 1 GHz
Min Typ. Max Unit
5 6.5 ¾ GHz
¾ 15 ¾
dB
6 9.5 ¾
¾ 1.1 ¾
dB
¾ 1.8
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Collecter output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
¾
¾
30
¾
¾
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾
¾
¾
1.15
0.8
Max
1
1
250
¾
1.25
Unit
mA
mA
pF
pF
1 2003-03-19
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Pages | Pages 7 | ||
Télécharger | [ C3607 ] |
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