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PDF A1331 Data sheet ( Hoja de datos )
| Número de pieza | A1331 | |
| Descripción | PNP Transistor - 2SA1331 | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Ordering number:EN3217
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1331/2SC3361
High-Speed Switching Applications
Features
· Fast switching speed.
· High breakdown voltage.
· Small-sized package permitting the 2SA1331/
2SC3361-applied sets to be made small and slim.
Switching Time Test Circuit
Package Dimensions
unit:mm
2018A
[2SA1331/2SC3361]
( ) : 2SA1331
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
Specifications
C : Collector
B : Base
E : Emitter
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
(–)60
(–)50
(–)5
(–)150
(–)400
(–)40
150
125
–55 to +125
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
VCB=(–)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Delay Time
Rise Time
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
td
tr
IC=(–)10mA, IB=(–)1mA
IC=(–)10mA, IB=(–)1mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Storage Time
tstg See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SA1331/2SC3361 are classified by 1mA hFE as follows :
90 4 180 135 5 270 200 6 400
Marking 2SA1331 : O, 2SC3361 : S
hFE rank : 4, 5, 6
Ratings
min typ
90*
100
(3.5)
2.7
(–)0.1
(–)0.75
(–)60
(–)50
(–)5
40
(120)
80
(190)
230
(200)
160
max
(–)0.1
(–)0.1
400*
(–)0.4
(–)1.1
Unit
µA
µA
MHz
pF
V
V
V
V
V
ns
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/7139MO, TS No.3217-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet A1331.PDF ] | |
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