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C5254 fiches techniques PDF

Toshiba - NPN Transistor - 2SC5254

Numéro de référence C5254
Description NPN Transistor - 2SC5254
Fabricant Toshiba 
Logo Toshiba 





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C5254 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure: NF = 1.5dB (f = 2 GHz)
· High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
15
7
1.5
40
20
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA, f = 1 GHz
VCE = 5 V, IC = 20 mA, f = 2 GHz
VCE = 5 V, IC = 5 mA, f = 1 GHz
VCE = 5 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
9 12 ¾ GHz
11.5
5.5
14.5
8.5
¾
¾
dB
¾ 1.1 ¾
dB
¾ 1.5
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 20 mA
Cob VCB = 5 V, IE = 0, f = 1 MHz
Cre
(Note 2)
¾
¾
50
¾
¾
¾1
¾1
¾ 160
0.5 ¾
0.4 0.8
mA
mA
pF
pF
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-24

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