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NCE Power Semiconductor - Trench NPT IGBT

Numéro de référence NCE25GD135T
Description Trench NPT IGBT
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE25GD135T fiche technique
http://www.ncepower.com
NCE25GD135T
1350V, 25A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT
z High speed switching
z Low saturation voltage: VCE(sat)=2.0V@IC=25A
z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1350V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE25GD135T
Symbol Description
VCES
VGES
IC
ICM(1)
IF
IFM
PD
TJ
Tstg
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current @TC=25°C
Continuous Collector Current @TC=100°C
Pulsed Collector Current
Diode Continuous Forward Current @TC=100°C
Diode Maximum Forward Current
Maximum Power Dissipation @TC=25°C
Maximum Power Dissipation @TC=100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
TL case for 5seconds
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1350
+/-30
50
25
90
25
150
312
125
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Wuxi NCE Power Semiconductor Co., Ltd
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