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PDF NCE08N65K Data sheet ( Hoja de datos )
| Número de pieza | NCE08N65K | |
| Descripción | N-Channel Super Junction Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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NCE08N65I,NCE08N65K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS
RDS(ON)
ID
650
600
7.8
V
mΩ
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE08N65I
TO-251
NCE08N65I
NCE08N65K
TO-252
NCE08N65K
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 7.8 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
TO-251
Value
650
±30
7.8
5
23.4
50
83
0.67
230
7.8
TO-252
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.2
1 page  
Test circuit
1）Gate charge test circuit & Waveform
NCE08N65I,NCE08N65K
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com
v1.2
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NCE08N65K.PDF ] | |
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