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NCE Power Semiconductor - N-Channel Super Junction Power MOSFET

Numéro de référence NCE05N60
Description N-Channel Super Junction Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE05N60 fiche technique
NCE05N60DNCE05N60, NCE05N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
VDS@Tjmax
RDS(ON)
ID
650
900
5
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE05N60D
TO-263
NCE05N60D
NCE05N60
TO-220
NCE05N60
NCE05N60F
TO-220F
NCE05N60F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
NCE05N60
NCE05N60D
NCE05N60F
600
±30
5 5*
3 3*
15 15
50
50 31
0.4 0.25
130
5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com v1.2

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