DataSheetWiki


TH58NVG4S0FTA20 fiches techniques PDF

Toshiba Semiconductor - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

Numéro de référence TH58NVG4S0FTA20
Description 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





TH58NVG4S0FTA20 fiche technique
TH58NVG4S0FTA20
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
The device has two 4328-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block
unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages).
The TH58NVG4S0F is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
x8
Memory cell array 4328 × 256K × 8 × 2
Register
4328 × 8
Page size
4328 bytes
Block size
(256K + 14.5K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 8032 blocks
Max 8192 blocks
Power supply
VCC = 2.7V to 3.6V
Access time
Cell array to register 30 µs max
Serial Read Cycle 25 ns min (CL=100pF)
Program/Erase time
Auto Page Program
Auto Block Erase
300 µs/page typ.
3 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
100 µA max
Package
TSOP I 48-P-1220-0.50C (Weight: 0.53 g typ.)
4bit ECC for each 512Byte is required.
1 2011-07-01C

PagesPages 30
Télécharger [ TH58NVG4S0FTA20 ]


Fiche technique recommandé

No Description détaillée Fabricant
TH58NVG4S0FTA20 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM Toshiba Semiconductor
Toshiba Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche