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Numéro de référence | HFU2N65S | ||
Description | N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
Mar 2010
HFD2N65S / HFU2N65S
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ = 5.0 ȍ
ID = 1.6 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 6.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD2N65S
1
2
3
HFU2N65S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ഒ)
– Continuous (TC = 100ഒ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
1.6
1.0
6.4
ρ30
100
1.6
4.4
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ఁ) *
Power Dissipation (TC = 25ഒ͚
- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
44
0.35
-55 to +150
300
Units
9
$
$
$
9
P-
$
P-
9QV
:
:
:ഒ
ഒ
ഒ
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.87
50
110
Units
ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡
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Pages | Pages 8 | ||
Télécharger | [ HFU2N65S ] |
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