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Numéro de référence | HFU1N65S | ||
Description | N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 3.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V
April 2009
BVDSS = 650 V
RDS(on) typ = 10.5 Ω
ID = 0.9 A
D-PAK I-PAK
2
1
3
HFD1N65S
1
2
3
HFU1N65S
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
0.9
0.57
3.6
±30
26
0.9
2.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
Junction-to-Case
Parameter
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.53
50
110
Units
℃/W
◎ SEMIHOW REV.A0,Apr 2009
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Pages | Pages 8 | ||
Télécharger | [ HFU1N65S ] |
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