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Datasheet HFI5N50S-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
HFI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFI10N60U | N-Channel MOSFET HFW10N60U_HFI10N60U
HFW10N60U / HFI10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended S  SemiHow mosfet | | |
| 2 | HFI50N06 | 60V N-Channel MOSFET HFW50N06_HFI50N06
Nov 2009
HFW50N06 / HFI50N06
60V N-Channel MOSFET
BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unri SemiHow mosfet | | |
| 3 | HFI5N50S | N-Channel MOSFET HFW5N50S_HFI5N50S
June 2009
HFW5N50S / HFI5N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteri SemiHow mosfet | | |
| 4 | HFI5N60S | N-Channel MOSFET HFW5N60S_HFI5N60S
Sep 2009
HFW5N60S / HFI5N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteris SemiHow mosfet | | |
| 5 | HFI5N65S | N-Channel MOSFET HFW5N65S_HFI5N65S
Mar 2010
HFW5N65S / HFI5N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics SemiHow mosfet | | |
| 6 | HFI5N65U | 650V N-Channel MOSFET HFW5N65U_HFI5N65U
HFW5N65U / HFI5N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf SemiHow mosfet | | |
| 7 | HFI640 | 200V N-Channel MOSFET HFW640 / HFI640
Mar 2008
HFW640 / HFI640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics � SemiHow mosfet | |
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