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Numéro de référence | HFI640 | ||
Description | 200V N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
Mar 2008
HFW640 / HFI640
200V N-Channel MOSFET
BVDSS = 200 V
RDS(on) typ = 0.145Ω
ID = 18 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 37 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
2
1
3
HFW640
1
2
3
HFI640
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
200
18
11.4
72
±30
250
18
13.9
5.5
PD Power Dissipation (TA = 25℃)
Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
3.13
139
1.11
-55 to +150
300
Symbol
RθJC
Rθ JA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
Typ.
--
--
--
Max.
0.9
40
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,Mar 2008
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Pages | Pages 8 | ||
Télécharger | [ HFI640 ] |
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