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Shantou Huashan - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence HFP640
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant Shantou Huashan 
Logo Shantou Huashan 





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HFP640 fiche technique
Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
General Description
These power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom,Industrial and Consumer Environment
TO-220
Features
1- G 2-D 3-S
18A,200V,RDS(on) <0.18@VGS =10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF640
Maximum RatingsTa=25unless otherwise specified)
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ---------------------------------------------------------- 200V
VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 200V
VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V
ID —— Drain Current (Continuous) ------------------------------------------------------------------- 18A
PD —— Maximum Power Dissipation ------------------------------------------------------------- 125W
IAR —— Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A
EAS—— Single Pulse Avalanche Energy
(starting Tj = 25, ID = IAR, VDD = 50 V) --------------------------------------------------- 320mJ
EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.0
Max 62.5
Typ 0.5
Unit
/W
/W
/W

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