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PDF NCE01H21T Data sheet ( Hoja de datos )

Número de pieza NCE01H21T
Descripción NCE N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE01H21T Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE01H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in a wide variety of other applications.
General Features
VDSS =100V,ID =210A
RDS(ON) < 4.0m@ VGS=10V Typ3.1 m
Good stability and uniformity with high EAS
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
DC motor drive
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01H21T
NCE01H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Limit
100
±20
210
160
850
385
2.57
2300
13
Unit
V
V
A
A
A
W
W/
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2

1 page




NCE01H21T pdf
http://www.ncepower.com
Pb Free Product
NCE01H21T
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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