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PDF NCE0160S Data sheet ( Hoja de datos )

Número de pieza NCE0160S
Descripción NCE N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE0160S Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE0160S
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0160S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
GENERAL FEATURES
VDS = 100V,ID =60A
RDS(ON) <16m@ VGS=12.6V
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
100% UIS TESTED!
100% ΔVds TESTED!
Schematic diagram
Marking and pin Assignment
PowerPAK SO-8 Bottom view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE0160
NCE0160S
PowerPAK SO-8
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
VDS
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=70)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (70)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
100
±20
60
50
80
105
0.70
550
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

1 page




NCE0160S pdf
http://www.ncepower.com
Figure7. BVDSS vs Junction Temperature
Pb Free Product
NCE0160S
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0

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