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NCE Power Semiconductor - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE0106Z
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE0106Z fiche technique
http://www.ncepower.com
Pb Free Product
NCE0106Z
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0106Z uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID = 6A
RDS(ON) < 140m@ VGS=10V (Typ:110m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
D
G
S
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-92 view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0106Z
NCE0106Z
TO-92
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
6
24
3
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
41.7 /W
Min Typ Max Unit
100 110
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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