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NCE0106R fiches techniques PDF

NCE Power Semiconductor - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE0106R
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE0106R fiche technique
http://www.ncepower.com
Pb Free Product
NCE0106R
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0106R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID = 6A
RDS(ON) < 140m@ VGS=10V (Typ:110m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
D
G
S
Schematic diagram
SOT-223 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0106R
NCE0106R
SOT-223-3L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
6
24
3
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
41.7 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
Min Typ Max Unit
100 110
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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