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2SB1122 fiches techniques PDF

ON Semiconductor - Bipolar Transistor

Numéro de référence 2SB1122
Description Bipolar Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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2SB1122 fiche technique
Ordering number : EN2040C
2SB1122
Bipolar Transistor
–50V, –1A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applicaitons
Voltage regulators relay drivers, lamp drivers, electrical equipment
Features
Adoption of FBET process
Ultrasmall size making it easy to provide high-density hybrid IC’s
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
--60 V
--50 V
--5 V
--1 A
--2 A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SB1122S-TD-E
2SB1122T-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
2
0.5
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
TD
Electrical Connection
2
1
3
RANK
Semiconductor Components Industries, LLC, 2013
December, 2013
D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266AT, TS No.2040-1/4

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