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PDF IPP65R660CFDA Data sheet ( Hoja de datos )
| Número de pieza | IPP65R660CFDA | |
| Descripción | CFDA Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CFDAAutomotive
650VCoolMOS™CFDAPowerTransistor
IPx65R660CFDA
DataSheet
Rev.2.1
Final
Automotive
1 page  
650VCoolMOS™CFDAPowerTransistor
IPB65R660CFDA,IPP65R660CFDA
3Thermalcharacteristics
Table3ThermalcharacteristicsTO-220
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
Soldering temperature, wavesoldering
only allowed at leads
Tsold
Min.
Values
Typ. Max.
2
62
260
Unit Note/TestCondition
K/W
K/W leaded
°C 1.6 mm (0.063 in.) from case for 10s
Table4ThermalcharacteristicsD²PAK
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient1) RthJA
Min.
Soldering temperature, wave- &
reflowsoldering allowed
Tsold
Values
Typ. Max.
2
62
35
260
Unit Note/TestCondition
K/W
K/W
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB, 6cm²
cooling area
°C reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
5 Rev.2.1,2014-11-19
5 Page 
650VCoolMOS™CFDAPowerTransistor
IPB65R660CFDA,IPP65R660CFDA
Drain-sourcebreakdownvoltage
760
740
720
700
680
660
640
620
600
580
560
540
-40
0
VBR(DSS)=f(Tj);ID=0.25mA
40 80
Tj[°C]
Typ.capacitances
105
Ciss
Coss
104 Crss
103
102
101
100
120 160
0 100 200 300 400 500 600
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Typ.Cossstoredenergy
4
3
2
1
0
0 100 200 300 400 500 600
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11 Rev.2.1,2014-11-19
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IPP65R660CFDA.PDF ] | |
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