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IPD068P03L3G fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPD068P03L3G
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPD068P03L3G fiche technique
OptiMOSTM P3 Power-Transistor
Features
• single P-Channel in DPAK
• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
• 100% Avalanche tested
• Pb-free; RoHS compliant, halogen free
• applications: power management
• Halogen-free according to IEC61249-2-21
IPD068P03L3 G
Product Summary
VDS
RDS(on),max
IDD
VGS = 10V
VGS = 4.5V
-30 V
6.8 mW
11.0
-70 A
PG-TO252-3
Type
IPD068P03L3 G
Package
Marking
PG-TO252-3 068P03L
Lead free
Yes
Packing
non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C2)
E AS I D=-70 A, R GS=25 W
V GS
P tot T C=25 °C
T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
-70
-70
-280
149
±20
100
-55 ... 175
tbd
260
55/175/56
Unit
A
mJ
V
W
°C
°C
Rev. 2.1
page 1
2014-05-16

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