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PDF FDMQ8403 Data sheet ( Hoja de datos )
| Número de pieza | FDMQ8403 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMQ8403
July 2012
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers
N-Channel PowerTrench® MOSFET
100 V, 6 A, 110 mΩ
Features
General Description
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Substantial efficiency benefit in PD solutions
RoHS Compliant
This quad MOSFET solution provides ten-fold improvement in
power dissipation over diode bridge.
Application
High-Efficiency Bridge Rectifiers
Top
Bottom
G4
D1/D4
D3/S4
G3
S3
S3
D1/D4
D3/ S1/
S4 D2
MLP 4.5x5
Pin 1
G1
D1/D4
S1/D2
G2
S2
S2
S3 7
S3 8
G3 9
D3/S4 10
D1/D4 11
G4 12
Q3 Q2
Q4 Q1
6 S2
5 S2
4 G2
3 S1/D2
2 D1/D4
1 G1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
100
±20
6
9
3.1
12
17
1.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
135
°C/W
Device Marking
FDMQ8403
Device
FDMQ8403
Package
MLP 4.5x5
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMQ8403 Rev.C2
1
www.fairchildsemi.com
1 page  
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMQ8403 Rev.C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDMQ8403.PDF ] | |
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