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K1062 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SK1062

شماره قطعه K1062
شرح مفصل 2SK1062
تولید کننده Toshiba 
آرم Toshiba 


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K1062 شرح
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1062
High Speed Switching Applications
Analog Switching Applications
Interface Applications
2SK1062
Unit: mm
Excellent switching time: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 ms (min)
@ID = 50 mA
Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA
Enhancement-mode
Complementary to 2SJ168
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP
PD
Tch
Tstg
60
±20
200
800
200
150
55~150
V
V
mA
mW
°C
°C
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01

قانون اساسیصفحه 5
دانلود [ K1062 دیتاشیت ]



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