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K1061 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SK1061

شماره قطعه K1061
شرح مفصل 2SK1061
تولید کننده Toshiba 
آرم Toshiba 


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K1061 شرح
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SK1061
Unit: mm
Excellent switching times: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
Low on resistance: RDS (ON) = 0.6 (typ.)
Enhancement-mode
Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID
IDP
PD
Tch
Tstg
200
800
300
150
55~150
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01

قانون اساسیصفحه 5
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