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Toshiba - MOSFET ( Transistor ) - 2SK1828

Numéro de référence K1828
Description MOSFET ( Transistor ) - 2SK1828
Fabricant Toshiba 
Logo Toshiba 





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K1828 fiche technique
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1828
High Speed Switching Applications
Analog Switch Applications
2.5 V gate drive
Low threshold voltage: Vth = 0.5 to 1.5 V
High speed
Enhancement-mode
Small package
2SK1828
Unit: mm
Marking
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VGSS
ID
PD
Tch
Tstg
20
10
50
200
150
55 to 150
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Start of commercial production
1991-02
1 2014-03-01

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