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Toshiba - MOSFET ( Transistor ) - 2SK1826

Numéro de référence K1826
Description MOSFET ( Transistor ) - 2SK1826
Fabricant Toshiba 
Logo Toshiba 





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K1826 fiche technique
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1826
High Speed Switching Applications
Analog Switch Applications
· 4 V gate drive
· Low threshold voltage: Vth = 0.8~2.5 V
· High speed
· Enhancement-mode
· Small package
Marking
Equivalent Circuit
2SK1826
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VGSS
ID
PD
Tch
Tstg
50
10
50
200
150
-55~150
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Unit
V
V
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
1 2003-03-27

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