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PDF SCH2080KE Data sheet ( Hoja de datos )
| Número de pieza | SCH2080KE | |
| Descripción | N-channel SiC power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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SCH2080KE
N-channel SiC power MOSFET co-packaged with SiC-SBD
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
80m
40A
262W
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Low VSD
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
Application
・Solar inverters
・DC/DC converters
・Induction heating
・Motor drives
Outline
TO-247
Inner circuit
D(2)
G(1)
*1 *2
S(3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
*2 SBD
Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
-
SCH2080KE
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
PD
Tj
Tstg
Value
1200
40
28
80
6 to 22
262
175
55 to 175
Unit
V
A
A
A
V
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.01 - Rev.D
1 page  
SCH2080KE
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
300
250
200
150
100
50
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Data Sheet
Fig.2 Maximum Safe Operating Area
100
PW = 100us
PW = 1ms
10
Operation in this
area is limited
by RDS(ON)
1 PW = 10ms
Ta = 25ºC
Single Pulse
PW = 100ms
0.1
0.1 1 10 100 1000
10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
Ta = 25ºC
Single
0.1
0.01
0.001
0.0001
0.001 0.01 0.1
1
Pulse Width : PW [s]
10
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/12
2014.01 - Rev.D
5 Page 
SCH2080KE
Electrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS = 0V
Pulsed
10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
1 Ta = 25ºC
0.1
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta = 25ºC
di / dt = 150A / us
VR = 400V
VGS = 0V
Pulsed
100
0.01
0
0.5 1 1.5 2
Source - Drain Voltage : VSD [V]
10
1
10 100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/12
2014.01 - Rev.D
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SCH2080KE.PDF ] | |
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