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Numéro de référence | IPP80P03P4L-07 | ||
Description | Power-Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
IPB80P03P4L-07
IPI80P03P4L-07, IPP80P03P4L-07
Product Summary
V DS
R DS(on) (SMD Version)
ID
-30 V
6.9 mΩ
-80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80P03P4L-07
IPI80P03P4L-07
IPP80P03P4L-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P03L07
4P03L07
4P03L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V1)
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
-80
-65
-320
135
-80
+5/-16
88
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-07-29
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Pages | Pages 9 | ||
Télécharger | [ IPP80P03P4L-07 ] |
No | Description détaillée | Fabricant |
IPP80P03P4L-04 | Power-Transistor | Infineon |
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