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Numéro de référence | IPB180N10S4-02 | ||
Description | Power-Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
OptiMOSTM-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB180N10S4-02
Product Summary
VDS
RDS(on)
ID
100 V
2.5 mΩ
180 A
PG-TO263-7-3
Type
IPB180N10S4-02
Package
PG-TO263-7-3
Marking
4N1002
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Conditions
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=90A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
180
171
720
1110
180
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-01-30
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Pages | Pages 9 | ||
Télécharger | [ IPB180N10S4-02 ] |
No | Description détaillée | Fabricant |
IPB180N10S4-02 | Power-Transistor | Infineon |
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