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IPI80P04P4L-08 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPI80P04P4L-08
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPI80P04P4L-08 fiche technique
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB80P04P4L-08
IPI80P04P4L-08, IPP80P04P4L-08
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
7.9 mW
-80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70P04P4L-08
IPI70P04P4L-08
IPP70P04P4L-08
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P04L08
4P04L08
4P04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V1)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-80
-56
-320
24
-80
±162)
75
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-04-27

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