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IPI80P04P4L-06 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPI80P04P4L-06
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPI80P04P4L-06 fiche technique
Final Data Sheet
IPB80P04P4L-06
IPI80P04P4L-06, IPP80P04P4L-06
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
6.4 mW
-80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80P04P4L-06
IPI80P04P4L-06
IPP80P04P4L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P04L06
4P04L06
4P04L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-80
-68
-320
31
-80
±163)
88
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-02-14

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