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PDF IPB80P04P4L-06 Data sheet ( Hoja de datos )
| Número de pieza | IPB80P04P4L-06 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Final Data Sheet
IPB80P04P4L-06
IPI80P04P4L-06, IPP80P04P4L-06
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
6.4 mW
-80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80P04P4L-06
IPI80P04P4L-06
IPP80P04P4L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P04L06
4P04L06
4P04L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-80
-68
-320
31
-80
±163)
88
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-02-14
1 page  
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
320
-10V
240
160
80
0
01234
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
320
25 °C
-55 °C 175 °C
240
Final Data Sheet
IPB80P04P4L-06
IPI80P04P4L-06, IPP80P04P4L-06
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
25
-3V -3.2V
-5V
-3.5V
20
-4.5V
15
-4V
-3.5V
10
5
-4V
-4.5V
-5V
-7V
-10V
-3V
-2.8V
56
0
0
40
-I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD
80
9
8
7
160
6
80
5
0
2345678
-V GS [V]
4
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2011-02-14
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB80P04P4L-06.PDF ] | |
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