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IPB120P04P4L-03 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPB120P04P4L-03
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPB120P04P4L-03 fiche technique
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
3.1 mW
-120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120P04P4L-03
IPI120P04P4L-03
IPP120P04P4L-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P04L03
4P04L03
4P04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-120
-114
-480
78
-120
±163)
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-02-10

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