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Numéro de référence | NCE75H21 | ||
Description | NCE N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE75H21
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in Automotive applications and a wide variety of other
applications.
General Features
● VDSS =75V,ID =210A
RDS(ON) < 4mΩ @ VGS=10V
Schematic diagram
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21
NCE75H21
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Limit
75
±20
210
150
840
310
2.07
Unit
V
V
A
A
A
W
W/℃
Wuxi NCE Power Semiconductor Co., Ltd
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v1.2
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Pages | Pages 7 | ||
Télécharger | [ NCE75H21 ] |
No | Description détaillée | Fabricant |
NCE75H21 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE75H21B | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE75H21D | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE75H21T | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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