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PDF NCE75H21T Data sheet ( Hoja de datos )

Número de pieza NCE75H21T
Descripción NCE N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power 
Logotipo NCE Power Logotipo



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No Preview Available ! NCE75H21T Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE75H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
General Features
VDSS =75V,ID =210A
RDS(ON) < 4m@ VGS=10V
Schematic diagram
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21T
NCE75H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 4)
EAS
Limit
75
±20
210
150
840
330
2.2
2200
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2

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NCE75H21T pdf
http://www.ncepower.com
Pb Free Product
NCE75H21T
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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