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NCE Power - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE7578
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power 
Logo NCE Power 





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NCE7578 fiche technique
http://www.ncepower.com
NCE7578
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7578 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
7.0
8.5
78
V
m
m
A
Features
VDS=75VID=78A@ VGS=10V
RDS(ON)<8.5m@ VGS=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7578
NCE7578
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=37.5V,VG=10V,L=0.5mH
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±20
78
55
300
30
160
1.07
550
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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