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Numéro de référence | NCE7560K | ||
Description | NCE N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power | ||
Logo | |||
1 Page
http://www.ncepower.com
NCE7560K
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7560K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
6.8
8.5
60
V
mΩ
mΩ
A
Features
● VDS=75V;ID=60A@ VGS=10V;
RDS(ON)<8.5mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
100% UIS TESTED!
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7560K
NCE7560K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±20
60
42
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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Pages | Pages 7 | ||
Télécharger | [ NCE7560K ] |
No | Description détaillée | Fabricant |
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