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Numéro de référence | NCE6005R | ||
Description | NCE N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE6005R
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6005R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =5A
RDS(ON) < 45mΩ @ VGS=10V
(Typ:38mΩ)
D
G
S
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
SOT-223-3L view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6005R
NCE6005R
SOT-223-3L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Limit
60
±20
5
3.5
20
2
-55 To 150
62.5
Unit
V
V
A
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Min Typ Max Unit
60 69
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE6005R ] |
No | Description détaillée | Fabricant |
NCE6005R | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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