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Numéro de référence | NCE6020I | ||
Description | NCE N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE6020I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6020I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
Genera Features
● VDS =60V,ID =20A
RDS(ON) <44mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6020I
NCE6020I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
60
±20
20
14
45
30
0.2
72
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1
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Pages | Pages 7 | ||
Télécharger | [ NCE6020I ] |
No | Description détaillée | Fabricant |
NCE6020I | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE6020K | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE6020L | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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