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Numéro de référence | NCE6020L | ||
Description | NCE N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power | ||
Logo | |||
http://www.ncepower.com
Pb Free Product
NCE6020L
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE6020L uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =60V,ID =20A
RDS(ON) <45mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-251S top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE6020L
NCE6020L
TO-251S
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Limit
60
±20
20
14
60
40
0.27
72
Unit
V
V
A
A
A
W
W/℃
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE6020L ] |
No | Description détaillée | Fabricant |
NCE6020I | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE6020K | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE6020L | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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