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NCE6020L fiches techniques PDF

NCE Power - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE6020L
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power 
Logo NCE Power 





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NCE6020L fiche technique
http://www.ncepower.com
Pb Free Product
NCE6020L
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE6020L uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =60V,ID =20A
RDS(ON) <45m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-251S top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE6020L
NCE6020L
TO-251S
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Limit
60
±20
20
14
60
40
0.27
72
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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