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Numéro de référence | NCE6075 | ||
Description | NCE N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCE Power | ||
Logo | |||
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http://www.ncepower.com
Pb Free Product
NCE6075
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6075 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =75A
RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6075
NCE6075
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
75
50
300
110
0.73
450
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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v1.3
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Pages | Pages 7 | ||
Télécharger | [ NCE6075 ] |
No | Description détaillée | Fabricant |
NCE6075 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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