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دیتاشیت - NCE Power - NCE N-Channel Enhancement Mode Power MOSFET

شماره قطعه NCE85H21T
شرح مفصل NCE N-Channel Enhancement Mode Power MOSFET
تولید کننده NCE Power 
آرم NCE Power 


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NCE85H21T شرح
http://www.ncepower.com
Pb Free Product
NCE85H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
VDSS =85V,ID =210A
RDS(ON) < 4.5m@ VGS=10V
Schematic diagram
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21T
NCE85H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 3)
EAS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
210
150
850
330
2.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

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